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PD - 94318A
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number IRHY57133CMSE Radiation Level RDS(on) 100K Rads (Si) 0.09 ID 18A*
IRHY57133CMSE 130V, N-CHANNEL
4#
TECHNOLOGY
c
T0-257AA
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 18* 12 72 75 0.6 20 80 18 7.5 8.0 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063in./1.6mm from case for 10sec) 4.3(Typical)
g
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10/03/01
IRHY57133CMSE
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
130 -- -- 2.5 8.5 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.16 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.09 4.5 -- 10 25 100 -100 40 16 18 20 70 25 35 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 12A
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 12A VDS= 104V ,VGS=0V VDS = 104V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 18A VDS = 65V VDD = 65V, ID = 18A, VGS =12V, RG = 7.5
ns
nH
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
965 300 20
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 18* 72 1.2 200 1.5
Test Conditions
A
V nS C
Tj = 25C, IS = 18A, VGS = 0V Tj = 25C, IF = 18A, di/dt 100A/s VDD 25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
R thJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 1.67 80
C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics
IRHY57133CMSE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-257AA) Diode Forward Voltage
100K Rads (Si)
Units
V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS=104V, VGS=0V VGS = 12V, ID = 12A VGS = 12V, ID = 12A VGS = 0V, ID = 18A
Min
130 2.0 -- -- -- -- -- --
Max
-- 4.5 100 -100 10 0.09 0.09 1.2
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 130 130 130 130 130 32.5 130 130 130 100 50 28.4 130 120 30 -- --
150 120 VDS 90 60 30 0 0 -5 -10 VGS -15 -20 Br I Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY57133CMSE
Pre-Irradiation
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
10
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1
5.0V
1
0.1
5.0V
20s PULSE WIDTH T = 25 C
J 1 10 100
0.01 0.1
0.1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
TJ = 150 C
10
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 18A
I D , Drain-to-Source Current (A)
2.0
1.5
TJ = 25 C
1
1.0
0.5
0.1 5 7 9
15
V DS = 50V 20s PULSE WIDTH 11 13
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHY57133CMSE
2000
VGS , Gate-to-Source Voltage (V)
1600
VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = 18A
16
C, Capacitance (pF)
VDS = 104V VDS = 65V VDS = 26V
1200
Ciss C oss
12
800
8
400
C rss
4
0 1 10 100
0 0 10
FOR TEST CIRCUIT SEE FIGURE 13
30 20 40
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
10 T J = 150C
ID, Drain-to-Source Current (A)
100
10
100s 1ms
1
T J = 25C
1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 10ms
VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 VSD, Source-toDrain Voltage (V)
1000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHY57133CMSE
Pre-Irradiation
20
LIMITED BY PACKAGE
VGS
16
VDS
RD
D.U.T.
+
I D , Drain Current (A)
RG
-VDD
12
VGS
Pulse Width 1 s Duty Factor 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05
0.1
0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.001 0.01
P DM t1 t2 1
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHY57133CMSE
140
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
120 100
ID 8.0A 11.4A BOTTOM 18A TOP
VD S
L
D R IV E R
80 60 40 20 0 25 50 75 100 125 150
RG
D .U .T.
IA S
+ - VD D
A
VGS 20V
tp
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S tp
Starting T , Junction Temperature( C) J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHY57133CMSE
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 50V, starting TJ = 25C, L= 0.5 mH Peak IL = 18A, VGS = 12V ISD 18A, di/dt 280A/s, VDD 130V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 104 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-257AA
PAD ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 10/01
8
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